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| Parameter | Value |
|---|---|
| Technology | Silicon-based |
| Gate Type | Planar |
| Channel Length | 30 nm |
| Maximum Frequency | 5 GHz |
| Power Consumption | 150 mW |
| Gate Dielectric Material | HfO2 |
| Applications | Computing, Communications |
| Environmental Tolerance | -40°C to 125°C |
| Reliability Testing | JEDEC Standard |
| Certification | ISO 9001 |